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Industry news /NEWS

Vishay new 25V N channel power MOSFET effectively improves power efficiency and power density

Author: ComeFrom: Date:2017/11/29 14:09:45 Hits:1022

Vishay introduces a new 25V N channel TrenchFET Gen IV power MOSFET---SiRA20DP, which is the lowest in the industry in 10V's maximum conduction resistance, with only 0.58M Omega. Vishay SiliconixSiRA20DP has the lowest gate charge, and the conduction resistance is less than 0.6m ohma, which makes the gate charge and the conduction resistance product the best value coefficient (FOM) also the lowest. It can improve the efficiency and power density of various applications.
Today's release MOSFET uses 6mm x 5mm PowerPAK SO-8 encapsulation, which is one of the two 25V MOSFET whose maximum resistance is less than 0.6m Omega. Compared with similar devices, the typical gate charge of SiRA20DP is lower, only 61nC, FOM 0.035 Omega *nC, low 32%. The conduction resistance of other 25V N channel MOSFET is 11% or more high.
SiRA20DP's low on resistance can reduce transmission power loss, improve system efficiency, achieve higher power density, and is especially suitable for OR-ring function in redundant power architecture. The FOM of the device is low, which can improve the switching performance, such as DC/DC conversion in communication and server power, battery switching in battery system, and load switching from 5V to 12V input power.
The MOSFET was tested by 100% RG and UIS, conforming to RoHS, and halogen free.
SiRA20DP can now provide samples and have achieved mass production. The supply cycle for bulk orders is fifteen weeks.

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